https://w.electrodragon.com/w/index.php?action=history&feed=atom&title=Category%3ATransistor 2026-06-04T09:18:56Z Revision history for this page on the wiki MediaWiki 1.37.2 https://w.electrodragon.com/w/index.php?title=Category:Transistor&diff=30454&oldid=prev 2021-04-06T10:09:03Z

<p></p> <p><b>New page</b></p><div>* Series MMBT, S8xxx, S9xxx<br /> {| class=&quot;wikitable sortable&quot;<br /> |-<br /> ! Name !! Type !! Type !! Prameter <br /> |-<br /> | S8050 || Switch || NPN || -<br /> |-<br /> | SS8050LT1 || Example || Example<br /> |-<br /> | SS8550LT1 || Example || Example<br /> |-<br /> | S9012 || Example || Example<br /> |-<br /> | S9013 || Example || Example<br /> |-<br /> | S9014 || Example || Example<br /> |-<br /> | MMBT3904LT1 || Signal || NPN<br /> |-<br /> | MMBT3906LT1 || Example || Example<br /> |}<br /> == Transistor ==<br /> * SPW20N603C - Vds 650V, Rds 0.19ohm, Id = 20.7A<br /> <br /> == Transistor ==<br /> * Transistor BJT is current-driven activated, more robust based on activated current, MOSFET is voltage driven activated, may influenced by small noise. <br /> * BJTs are preferred for low current applications, while MOSFETs are for high power functions.<br /> {| class=&quot;wikitable sortable&quot;<br /> |-<br /> ! NPN || PNP !! Type !! Vceo !! Vcbo !! Collector Current Ic !! Power dissipation Pcm !! hFE<br /> |-<br /> | s8050 || S8550 || a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications || 20 || 30 || 0.70 || 1W<br /> |-<br /> | 9013 || 9012|| 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Excellent hFE linearity || 20|| 40 || 0.50 || 0.625W<br /> |-<br /> | 9014 || 9015|| PRE-AMPLIFIER, LOW LEVEL &amp; LOW NOISE Excellent hFE linearity || 45 || 50 || 0.10 || 0.45W<br /> |-<br /> | 2N5551 || 2N5401|| HIGH VOLTAGE SWITCHING TRANSISTOR, High current gain || 160/150||180/160 || 0.60 || 0.625W<br /> |-<br /> | 2N3904 || 2N3906 || NPN GENERAL PURPOSE AMPLIFIER || 40 || 60/40 || 0.20 || 0.5 W<br /> |-<br /> | 3DG3001 A1-H || - || type power switching transistor|| 450 V|| - || 0.8A || 0.8 W <br /> |-<br /> | MJE13003 || - || high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. || 450 V || 700V || 1.5 A || 1.1 W <br /> |-<br /> | 2SC1815 || 2SA1015 || LOW FREQUENCY PNP AMPLIFIER TRANSISTOR || 50 || 60/50 || 0.15A || -<br /> |-<br /> | 2SC945 || 2SA733 || LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR || 50 || 60 || 0.15 || -<br /> |}<br /> * MMBT5401 - Vce = -150V, Ic = -600mA<br /> * [http://www.unisonic.com.tw/product2.asp?BClass=154 reference page.]<br /> <br /> <br /> [[category: RCL]]</div>

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