Category:Transistor

Name	Type	Type	Prameter
S8050	Switch	NPN	-
SS8050LT1	Example	Example
SS8550LT1	Example	Example
S9012	Example	Example
S9013	Example	Example
S9014	Example	Example
MMBT3904LT1	Signal	NPN
MMBT3906LT1	Example	Example

Transistor

Transistor BJT is current-driven activated, more robust based on activated current, MOSFET is voltage driven activated, may influenced by small noise.
BJTs are preferred for low current applications, while MOSFETs are for high power functions.

NPN	PNP	Type	Vceo	Vcbo	Collector Current Ic	Power dissipation Pcm
s8050	S8550	a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications	20	30	0.70	1W
9013	9012	1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Excellent hFE linearity	20	40	0.50	0.625W
9014	9015	PRE-AMPLIFIER, LOW LEVEL & LOW NOISE Excellent hFE linearity	45	50	0.10	0.45W
2N5551	2N5401	HIGH VOLTAGE SWITCHING TRANSISTOR, High current gain	160/150	180/160	0.60	0.625W
2N3904	2N3906	NPN GENERAL PURPOSE AMPLIFIER	40	60/40	0.20	0.5 W
3DG3001 A1-H	-	type power switching transistor	450 V	-	0.8A	0.8 W
MJE13003	-	high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.	450 V	700V	1.5 A	1.1 W
2SC1815	2SA1015	LOW FREQUENCY PNP AMPLIFIER TRANSISTOR	50	60/50	0.15A	-
2SC945	2SA733	LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR	50	60	0.15	-

The following 3 pages are in this category, out of 3 total.